Improvement of III-V dilute nitride thin films for solar cell application: Effect of antimony doping

Highly mismatched alloys such as GaNAs demonstrate exotic electronic properties the splitting of conduction bands (CB) into E－ and E＋ sub-bands, make them promising for novel application. However, incorporation nitrogen atoms in host GaAs severely degrades electro-optical this alloy with added challenges precise control compositions. Here we focus on effect Sb doping compositional thin films grown by molecular beam epitaxy. has enhanced rate significantly, group-V (N,As,Sb) is performed using a simple equation based surface reaction model. While there were no distinguishable addition E ＋ strained layers studied laser-modulated photo-reflectance (PR) spectroscopy, marked improvement was observed when to lattice-matched GaInNAs films. It revealed that N both system affected adatoms same manner. PR spectroscopy also impact significant epitaxial quality overgrown accompanied increased abruptness around GaNAs/GaAs heterointerfaces. deep localized states dominated photo-luminescence (PL), showed only marginal defect distribution PL quality, prominent improving transport property electron mobility ascribed reduced potential fluctuation E－band. The reduction calculated even faster sub-bands.